Articol #332 decembrie 2023

Thorough Wide Temperature Range Analysis of Pt/SiC and Cr/SiC Schottky Contacts Non-uniformity
Revista/Volum: Materials (ISSN 1996-1944). Silicon Carbide: Material Growth, Device Processing and Applications. 1996-1944

Razvan Pascu Gheorghe Pristavu * Dan-Theodor Oneata Gheorghe Brezeanu * Cosmin Romanitan Nikolay Djourelov Andrei Enache Florin Draghici Andrei Mario Ivan Emilian Ceuca

DOI: https://doi.org/10.3390/ma17020400